Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

70 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Power Dissipation (Max)  

140W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

17A Tc

Series  

FDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Base Part Number  

STI21N

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

220m Ω @ 8.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

16ns

Vgs (Max)  

±25V

Fall Time (Typ)  

48 ns

Continuous Drain Current (ID)  

17A

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.22Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

68A

Avalanche Energy Rating (Eas)  

610 mJ

REACH SVHC  

unknown

RoHS Status  

ROHS3 Compliant