Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

215W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 1mA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

SAFeFET™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Form  

THROUGH-HOLE

Base Part Number  

STB85N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

215W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

15m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Vgs (Max)  

±18V

Fall Time (Typ)  

145 ns

Continuous Drain Current (ID)  

80A

Gate to Source Voltage (Vgs)  

18V

Drain Current-Max (Abs) (ID)  

60A

Drain-source On Resistance-Max  

0.015Ohm

Drain to Source Breakdown Voltage  

33V

Avalanche Energy Rating (Eas)  

550 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant