Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

165 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Series  

STripFET™ II

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

18mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

-60V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

-300mA

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB80P

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

18m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

258nC @ 10V

Rise Time  

190ns

Vgs (Max)  

±16V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

40A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

16V

Drain Current-Max (Abs) (ID)  

80A

Drain to Source Breakdown Voltage  

-55V

Dual Supply Voltage  

55V

Nominal Vgs  

3 V

Width  

9.35mm

Length  

10.4mm

Height  

4.6mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free