Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

61 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP13N

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

480m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

47nC @ 10V

Rise Time  

23ns

Vgs (Max)  

±30V

Fall Time (Typ)  

24 ns

Continuous Drain Current (ID)  

11A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.48Ohm

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

44A

Dual Supply Voltage  

500V

Avalanche Energy Rating (Eas)  

240 mJ

Nominal Vgs  

3.75 V

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant