Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

3 (168 Hours)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Additional Feature  

AVALANCHE RATED

Terminal Position  

SINGLE

Base Part Number  

STP6N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1020pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45.5nC @ 10V

Rise Time  

14ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

16 ns

Continuous Drain Current (ID)  

6A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Pulsed Drain Current-Max (IDM)  

24A

DS Breakdown Voltage-Min  

600V

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant