Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

26 ns

Power Dissipation (Max)  

100W Tc

Number of Elements  

1

Series  

MDmesh™

Packaging  

Tube

Operating Temperature  

-65°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

3 (168 Hours)

Number of Terminations  

3

Terminal Finish  

TIN

Additional Feature  

AVALANCHE RATED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP8N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1 Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

380pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

18nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±30V

Fall Time (Typ)  

8 ns

Continuous Drain Current (ID)  

8A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

1Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

32A

Avalanche Energy Rating (Eas)  

200 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free