Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

75 ns

Power Dissipation (Max)  

190W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

75A Tc

Series  

STripFET™

Packaging  

Tape & Reel (TR)

Operating Temperature  

-50°C~150°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Voltage - Rated DC  

200V

Terminal Form  

GULL WING

Current Rating  

75A

Base Part Number  

STB75N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Turn On Delay Time  

53 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

34m Ω @ 37A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3260pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

84nC @ 10V

Rise Time  

33ns

Vgs (Max)  

±20V

Fall Time (Typ)  

29 ns

Continuous Drain Current (ID)  

75A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Avalanche Energy Rating (Eas)  

205 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free