Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

STripFET™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Voltage - Rated DC  

200V

Terminal Position  

SINGLE

Current Rating  

30A

Base Part Number  

STP30N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

75m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1597pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

38nC @ 10V

Rise Time  

15.7ns

Continuous Drain Current (ID)  

30A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.075Ohm

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

120A

Avalanche Energy Rating (Eas)  

140 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free