Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Turn Off Delay Time  

58 ns

Power Dissipation (Max)  

35W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

7.5A Tc

Series  

SuperMESH™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

3 (168 Hours)

Number of Terminations  

3

Terminal Finish  

TIN

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

800V

Current Rating  

7.5A

Base Part Number  

STF9

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Case Connection  

ISOLATED

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 3.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

84nC @ 10V

Rise Time  

19ns

Vgs (Max)  

±30V

Fall Time (Typ)  

18 ns

Continuous Drain Current (ID)  

7.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

800V

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free