Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

150W Tc

Turn Off Delay Time  

58 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

6.7A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

TIN

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

850V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

6.7A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP8N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.4 Ω @ 3.35A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1870pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 10V

Rise Time  

19ns

Vgs (Max)  

±30V

Fall Time (Typ)  

18 ns

Continuous Drain Current (ID)  

6.7A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

850V

Avalanche Energy Rating (Eas)  

350 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free