Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

62 ns

Power Dissipation (Max)  

160W Tc

Number of Elements  

1

Series  

SuperMESH™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

600V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Current Rating  

13.5A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP14N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

500m Ω @ 6A, 10V

Vgs(th) (Max) @ Id  

4.5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds  

2220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

75nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±30V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

13.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.5Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

54A

Avalanche Energy Rating (Eas)  

300 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free