Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

55W Tc

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Operating Temperature  

175°C TJ

Packaging  

Tape & Reel (TR)

Series  

STripFET™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

60V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

30A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STD30N

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

55W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

28m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2370pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

41nC @ 5V

Rise Time  

100ns

Vgs (Max)  

±20V

Fall Time (Typ)  

45 ns

Continuous Drain Current (ID)  

30A

JEDEC-95 Code  

TO-252AA

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.03Ohm

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

120A

Avalanche Energy Rating (Eas)  

100 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free