Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

21A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

40W Tc

Turn Off Delay Time  

94 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

170mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

600V

Current Rating  

20A

Base Part Number  

STF25

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

40W

Case Connection  

ISOLATED

Turn On Delay Time  

24.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

160m Ω @ 10.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2400pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

84nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±25V

Fall Time (Typ)  

24 ns

Continuous Drain Current (ID)  

21A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

84A

Dual Supply Voltage  

600V

Avalanche Energy Rating (Eas)  

850 mJ

Nominal Vgs  

3 V

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free