Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

160W Tc

Turn Off Delay Time  

6 ns

Operating Temperature  

-65°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

600V

Current Rating  

11A

Base Part Number  

STB11N

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

450m Ω @ 5.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

20ns

Drain to Source Voltage (Vdss)  

650V

Vgs (Max)  

±30V

Fall Time (Typ)  

11 ns

Continuous Drain Current (ID)  

11A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.45Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

44A

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free