Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Surface Mount  

NO

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

14A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

29W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

1997

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

HIGH RELIABILITY

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

71m Ω @ 7.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

370pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

20nC @ 10V

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Drain Current-Max (Abs) (ID)  

14A

Drain-source On Resistance-Max  

0.071Ohm

Pulsed Drain Current-Max (IDM)  

68A

DS Breakdown Voltage-Min  

60V

Avalanche Energy Rating (Eas)  

71 mJ

RoHS Status  

Non-RoHS Compliant