Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

14 ns

Power Dissipation (Max)  

35W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Series  

DeepGATE™, STripFET™ VI

Packaging  

Tube

Operating Temperature  

175°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STU10P

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

DRAIN

Turn On Delay Time  

64 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

160m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

340pF @ 48V

Gate Charge (Qg) (Max) @ Vgs  

6.4nC @ 10V

Rise Time  

5.3ns

Vgs (Max)  

±20V

Fall Time (Typ)  

3.7 ns

Continuous Drain Current (ID)  

10A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

40A

Avalanche Energy Rating (Eas)  

80 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free