Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

29A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

210W Tc

Turn Off Delay Time  

106 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

105MOhm

Terminal Position  

SINGLE

Base Part Number  

STW36N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

210W

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

105m Ω @ 14.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2722pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

83.6nC @ 10V

Rise Time  

34ns

Vgs (Max)  

±25V

Fall Time (Typ)  

67 ns

Continuous Drain Current (ID)  

29A

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

116A

Avalanche Energy Rating (Eas)  

345 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free