Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

45W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-65°C~150°C TJ

Packaging  

Tube

Series  

FDmesh™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

SINGLE

Base Part Number  

STF20

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

45W

Case Connection  

ISOLATED

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

290m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

37nC @ 10V

Rise Time  

12ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

20A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.29Ohm

Pulsed Drain Current-Max (IDM)  

80A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

700 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant