Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

500W Tc

Turn Off Delay Time  

250 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

75V

Current Rating  

120A

Base Part Number  

STW220

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

500W

Turn On Delay Time  

50 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.4m Ω @ 60A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

12500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

430nC @ 10V

Rise Time  

215ns

Vgs (Max)  

±20V

Fall Time (Typ)  

130 ns

Continuous Drain Current (ID)  

120A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0044Ohm

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

480A

Avalanche Energy Rating (Eas)  

2500 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead