Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

40 ns

Power Dissipation (Max)  

25W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

18A Ta

Series  

STripFET™ II

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

TIN

Voltage - Rated DC  

200V

Current Rating  

18A

Base Part Number  

STF20

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

125m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

940pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

39nC @ 10V

Rise Time  

30ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

18A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

72A

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No