Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Weight  

9.071847g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

214W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

250mOhm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

550V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

20A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STW20N

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

214W

Turn On Delay Time  

24 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

250m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1480pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

56nC @ 10V

Rise Time  

16ns

Vgs (Max)  

±30V

Fall Time (Typ)  

8.5 ns

Continuous Drain Current (ID)  

20A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

80A

Avalanche Energy Rating (Eas)  

650 mJ

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free