Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

60W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.8V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

50A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Number of Elements  

1

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ III

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

LOW THRESHOLD

Voltage - Rated DC  

24V

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Current Rating  

50A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STD50N

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

10.5m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

24nC @ 10V

Rise Time  

130ns

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

50A

Drain-source On Resistance-Max  

0.0105Ohm

Pulsed Drain Current-Max (IDM)  

200A

Avalanche Energy Rating (Eas)  

280 mJ

RoHS Status  

ROHS3 Compliant