Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

80W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

3.8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Voltage - Rated DC  

500V

Current Rating  

3.8A

Base Part Number  

STP4N

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Turn On Delay Time  

11 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.8 Ω @ 1.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

21nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±30V

Fall Time (Typ)  

5 ns

Continuous Drain Current (ID)  

3.8A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

15.2A

Avalanche Energy Rating (Eas)  

220 mJ

Radiation Hardening  

No

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead