Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

ISOWATT-218-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

10.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

80W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Series  

PowerMESH™

Operating Temperature  

150°C TJ

Packaging  

Tube

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

AVALANCHE RATED

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STH15N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

360m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

80nC @ 10V

Drain to Source Voltage (Vdss)  

500V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

10.5A

Drain-source On Resistance-Max  

0.36Ohm

Pulsed Drain Current-Max (IDM)  

58.4A

DS Breakdown Voltage-Min  

500V

Avalanche Energy Rating (Eas)  

850 mJ

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead