Package / Case  

TO-247-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

190W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Packaging  

Tube

Operating Temperature  

150°C TJ

Series  

PowerMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

800V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

11A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STW11N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

800m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

70nC @ 10V

Rise Time  

13ns

Vgs (Max)  

±30V

Fall Time (Typ)  

23 ns

Continuous Drain Current (ID)  

11A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.8Ohm

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

44A

Avalanche Energy Rating (Eas)  

500 mJ

RoHS Status  

Non-RoHS Compliant

REACH SVHC  

not_compliant

Lead Free  

Contains Lead