Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

50A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

150W Tc

Operating Temperature  

175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

TIN

Voltage - Rated DC  

80V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

50A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP50N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

24m Ω @ 25A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

95ns

Vgs (Max)  

±20V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

50A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.024Ohm

Drain to Source Breakdown Voltage  

80V

Pulsed Drain Current-Max (IDM)  

200A

Avalanche Energy Rating (Eas)  

300 mJ

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead