Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

125W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

18A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MESH OVERLAY™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

200V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

18A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

IRF6

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

180m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1560pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

72nC @ 10V

Rise Time  

27ns

Vgs (Max)  

±20V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

18A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

72A

Avalanche Energy Rating (Eas)  

280 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead