Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

600V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

5A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

884pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±30V

Fall Time (Typ)  

7 ns

Continuous Drain Current (ID)  

5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

5A

Drain-source On Resistance-Max  

2Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

20A

Avalanche Energy Rating (Eas)  

300 mJ

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead