Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

50A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

180W Tc

Number of Elements  

1

Series  

STripFET™

Packaging  

Tube

Operating Temperature  

175°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

100V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

50A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP50N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Voltage  

100V

Element Configuration  

Single

Current  

50A

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

180W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

27m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

6000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

166nC @ 10V

Rise Time  

135ns

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

50A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.027Ohm

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

300 mJ

RoHS Status  

Non-RoHS Compliant

REACH SVHC  

not_compliant

Lead Free  

Contains Lead