Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

12A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

60W Tc

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

200mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

-60V

Current Rating  

-12A

Base Part Number  

STP12

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

60W

Turn On Delay Time  

20 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

200m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

21nC @ 10V

Rise Time  

40ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

12A

Threshold Voltage  

3.4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

-60V

Pulsed Drain Current-Max (IDM)  

48A

Dual Supply Voltage  

60V

Avalanche Energy Rating (Eas)  

200 mJ

Nominal Vgs  

3.4 V

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free