Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

80W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH VOLTAGE

Voltage - Rated DC  

500V

Current Rating  

2.5A

Base Part Number  

IRF8

JESD-30 Code  

R-PSIP-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

315pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

17nC @ 10V

Rise Time  

13ns

Vgs (Max)  

±30V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

4A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

4A

Drain-source On Resistance-Max  

3Ohm

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

12A

Avalanche Energy Rating (Eas)  

210 mJ

Feedback Cap-Max (Crss)  

50 pF

Turn Off Time-Max (toff)  

245ns

Turn On Time-Max (ton)  

137ns

Radiation Hardening  

No

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead