Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH VOLTAGE, FAST SWITCHING

Voltage - Rated DC  

500V

Current Rating  

4.5A

Base Part Number  

IRF8

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Turn On Delay Time  

11.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 2.7A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

610pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±20V

Fall Time (Typ)  

5 ns

Continuous Drain Current (ID)  

4.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

18A

Avalanche Energy Rating (Eas)  

290 mJ

Feedback Cap-Max (Crss)  

55 pF

Turn On Time-Max (ton)  

102ns

Radiation Hardening  

No

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead