Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

HTS Code  

8541.29.00.95

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

IRF8

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

850m Ω @ 3.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

832pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

39nC @ 10V

Drain to Source Voltage (Vdss)  

500V

Vgs (Max)  

±20V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

0.85Ohm

Pulsed Drain Current-Max (IDM)  

32A

DS Breakdown Voltage-Min  

500V

Avalanche Energy Rating (Eas)  

520 mJ

Feedback Cap-Max (Crss)  

110 pF

Turn Off Time-Max (toff)  

125ns

Turn On Time-Max (ton)  

93ns

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant