Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

1kV

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

3A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP3N

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

12ns

Drain to Source Voltage (Vdss)  

1000V

Vgs (Max)  

±30V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

3A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

3A

Drain-source On Resistance-Max  

6Ohm

Drain to Source Breakdown Voltage  

1kV

Pulsed Drain Current-Max (IDM)  

12A

Avalanche Energy Rating (Eas)  

244 mJ

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead