Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

33A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

180W Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

PowerMESH™ II

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Voltage - Rated DC  

200V

Current Rating  

33A

Base Part Number  

IRFP

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

180W

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

85m Ω @ 16A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

158nC @ 10V

Rise Time  

50ns

Vgs (Max)  

±20V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

33A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.085Ohm

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

132A

Avalanche Energy Rating (Eas)  

600 mJ

Radiation Hardening  

No

RoHS Status  

Non-RoHS Compliant

Lead Free  

Lead Free