Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

90 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

18A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

150°C TJ

Packaging  

Tape & Reel (TR)

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

190mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

500V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

18A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB21N

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1950pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

65nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±25V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

18A

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

72A

Dual Supply Voltage  

500V

Avalanche Energy Rating (Eas)  

480 mJ

Nominal Vgs  

3 V

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free