Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

23 ns

Power Dissipation (Max)  

100W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Series  

MDmesh™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

650V

Current Rating  

8A

Base Part Number  

STP8N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

18nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±30V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

8A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

1Ohm

Drain to Source Breakdown Voltage  

600V

Avalanche Energy Rating (Eas)  

200 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free