Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11.8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

50W Tc

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

200V

Current Rating  

19.4A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

50W

Case Connection  

ISOLATED

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

150m Ω @ 5.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

40nC @ 10V

Rise Time  

190ns

Vgs (Max)  

±30V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

11.8A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

48A

Avalanche Energy Rating (Eas)  

250 mJ

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free