Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

2.23W Ta 35W Tc

Turn Off Delay Time  

28 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Operating Temperature  

150°C TJ

Packaging  

Bulk

Published  

2013

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

600m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

840pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 10V

Rise Time  

28ns

Vgs (Max)  

±30V

Fall Time (Typ)  

14 ns

Continuous Drain Current (ID)  

8A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

0.6Ohm

Drain to Source Breakdown Voltage  

250V

Pulsed Drain Current-Max (IDM)  

32A

Avalanche Energy Rating (Eas)  

4.66 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free