Factory Lead Time  

10 Weeks

Contact Plating  

Gold

Package / Case  

8-PowerWDFN

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

8

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

7.4A Ta 22A Tc

Power Dissipation (Max)  

2.5W Ta 78W Tc

Turn Off Delay Time  

36 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Number of Elements  

1

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

UltraFET™

JESD-609 Code  

e4

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

8

ECCN Code  

EAR99

Resistance  

23MOhm

Voltage - Rated DC  

100V

Terminal Position  

DUAL

Current Rating  

22A

Configuration  

SINGLE WITH BUILT-IN DIODE

Voltage  

100V

Current  

22A

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.5W

Case Connection  

DRAIN

Turn On Delay Time  

23 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

23m Ω @ 7.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2680pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

44nC @ 10V

Rise Time  

11ns

Vgs (Max)  

±20V

Fall Time (Typ)  

8 ns

Continuous Drain Current (ID)  

7.4A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Width  

6mm

Height  

750μm

Length  

5mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free