Factory Lead Time  

6 Weeks

Lifecycle Status  

ACTIVE (Last Updated: 19 hours ago)

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Turn Off Delay Time  

40 ns

Power Dissipation (Max)  

33W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

6.5A Tc

Published  

2013

Series  

UniFET-II™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.25Ohm

Terminal Finish  

Tin (Sn)

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

33W

Case Connection  

ISOLATED

Turn On Delay Time  

17.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.25 Ω @ 3.25A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

730pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

17nC @ 10V

Rise Time  

70ns

Vgs (Max)  

±30V

Fall Time (Typ)  

60 ns

Continuous Drain Current (ID)  

6.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

26A

Avalanche Energy Rating (Eas)  

275 mJ

Width  

4.9mm

Length  

10.36mm

Height  

16.07mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free