Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

1.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

35W Tc

Turn Off Delay Time  

25 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2000

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 17 hours ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

800V

Current Rating  

1.5A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.3 Ω @ 750mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

550pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 10V

Rise Time  

30ns

Vgs (Max)  

±30V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

1.5A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

6A

Height  

9.19mm

Length  

10.16mm

Width  

4.7mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free