Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Turn Off Delay Time  

68 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Finish  

Tin (Sn)

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

650V

Current Rating  

13A

Base Part Number  

STP16N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

500m Ω @ 6.5A, 10V

Vgs(th) (Max) @ Id  

4.5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds  

2750pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

89nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

17 ns

Continuous Drain Current (ID)  

13A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.5Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

52A

Avalanche Energy Rating (Eas)  

350 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant