Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

13 ns

Power Dissipation (Max)  

30W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Series  

FDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STF18

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

55 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

290m Ω @ 6.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1030pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

15.5ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

18 ns

Continuous Drain Current (ID)  

13A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.29Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

52A

Avalanche Energy Rating (Eas)  

187 mJ

Width  

4.6mm

Length  

10.6mm

Height  

16.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No