Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

36 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

850mOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP7N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

11 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

980m Ω @ 3.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

737pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

11ns

Vgs (Max)  

±30V

Fall Time (Typ)  

19 ns

Continuous Drain Current (ID)  

6.2A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

525V

Pulsed Drain Current-Max (IDM)  

25A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free