Factory Lead Time  

42 Weeks

Package / Case  

TO-262-3 Full Pack, I2Pak

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

21 ns

Power Dissipation (Max)  

20W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

4A Tc

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

SINGLE

Base Part Number  

STFILE

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

8 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

2.6 Ω @ 2.2A, 10V

Vgs(th) (Max) @ Id  

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds  

340pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

12nC @ 10V

Rise Time  

7ns

Drain to Source Voltage (Vdss)  

525V

Vgs (Max)  

±30V

Fall Time (Typ)  

14 ns

Continuous Drain Current (ID)  

4A

JEDEC-95 Code  

TO-281

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

4A

DS Breakdown Voltage-Min  

525V

Avalanche Energy Rating (Eas)  

110 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No