Factory Lead Time  

5 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

120W Tc

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

470MOhm

Voltage - Rated DC  

-200V

Current Rating  

-11.5A

Lead Pitch  

2.54mm

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

120W

Turn On Delay Time  

20 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

470m Ω @ 5.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

40nC @ 10V

Rise Time  

195ns

Drain to Source Voltage (Vdss)  

200V

Vgs (Max)  

±30V

Fall Time (Typ)  

60 ns

Continuous Drain Current (ID)  

11.5A

Threshold Voltage  

-5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

-200V

Pulsed Drain Current-Max (IDM)  

46A

Dual Supply Voltage  

-200V

Nominal Vgs  

-5 V

Height  

9.4mm

Length  

10.1mm

Width  

4.7mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free