Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

2

Weight  

6.401g

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

24A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

270W Tc

Turn Off Delay Time  

164 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

UniFET™

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

190MOhm

Terminal Finish  

Tin (Sn)

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

270W

Turn On Delay Time  

47 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 12A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4150pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

85nC @ 10V

Rise Time  

108ns

Vgs (Max)  

±30V

Fall Time (Typ)  

86 ns

Continuous Drain Current (ID)  

24A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

96A

Height  

20.1mm

Length  

15.8mm

Width  

5mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free