Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

154 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

DeepGATE™, STripFET™ VI

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.7MOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP210

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Turn On Delay Time  

34 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.7m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

171nC @ 10V

Rise Time  

70ns

Vgs (Max)  

±20V

Fall Time (Typ)  

71 ns

Continuous Drain Current (ID)  

120A

Threshold Voltage  

2V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

480A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free