Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

154 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Series  

DeepGATE™, STripFET™ VI

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.7MOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP210

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Turn On Delay Time  

34 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.7m Ω @ 60A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

11800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

171nC @ 10V

Rise Time  

70ns

Vgs (Max)  

±20V

Fall Time (Typ)  

71 ns

Continuous Drain Current (ID)  

120A

Threshold Voltage  

2V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

75V

Pulsed Drain Current-Max (IDM)  

480A

Width  

4.6mm

Length  

10.4mm

Height  

15.75mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free