Factory Lead Time  

12 Weeks

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

125 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STB80N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

27 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.5m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

189nC @ 10V

Rise Time  

155ns

Vgs (Max)  

±20V

Fall Time (Typ)  

65 ns

Continuous Drain Current (ID)  

80A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0065Ohm

Drain to Source Breakdown Voltage  

55V

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant